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| inchange semiconductor product specification silicon npn power transistors S2055N description ? ? with to-3p(h)is package ? high voltage,high speed ? low collector saturation voltage ? built-in damper diode applications ? color tv horizontal output applications ? color tv switching regulator applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a i b base current 4 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 2.5 ??/w fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors S2055N characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i b =500ma ;v be =-1.7v;l=40mh 700 v v cesat-1 collector-emitter saturation voltage i c =4.5a ;i b =2.0a 1.0 v v cesat-2 collector-emitter saturation voltage i c =4.5a ;i b =1.0a 5.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =1.0a 1.2 v i cbo collector cut-off current v cb =1500v; v be =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 300 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 30 h fe-2 dc current gain i c =4.5a ; v ce =5v 4.5 9 c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 95 pf f t transition frequency i c =0.1a ; v ce =10v 2 mhz inchange semiconductor product specification 3 silicon npn power transistors S2055N package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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